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FCPF190N65FL1-F154 参数 Datasheet PDF下载

FCPF190N65FL1-F154图片预览
型号: FCPF190N65FL1-F154
PDF下载: 下载PDF文件 查看货源
内容描述: [Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead]
分类和应用:
文件页数/大小: 10 页 / 317 K
品牌: ONSEMI [ ONSEMI ]
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FCPF190N65FL1F154  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
650  
700  
V
V
V
V
I
= 0 V, I = 10 mA, T = 25_C  
DSS  
GS  
D
J
= 0 V, I = 10 mA, T = 150_C  
GS  
D
J
B
V
/
T
Breakdown Voltage Temperature  
Coefficient  
= 10 mA, Referenced to 25_C  
0.72  
V/_C  
DSS  
J
D
I
Zero Gate Voltage Drain Current  
V
V
V
= 650 V, V = 0 V  
60  
10  
A  
A  
V
DSS  
DS  
DS  
GS  
GS  
= 520 V, V = 0 V, T = 125_C  
GS  
C
I
Gate to Body Leakage Current  
=
20 V, V = 0 V  
100  
GSS  
DS  
ON CHARACTERISTICS  
V
Gate Threshold Voltage  
V
GS  
V
GS  
V
DS  
= V , I = 2 mA  
3
5
190  
GS(th)  
DS(on)  
DS  
D
R
Static Drain to Source On Resistance  
Forward Transconductance  
= 10 V, I = 10 A  
168  
18  
mꢀ  
D
g
= 20 V, I = 10 A  
S
FS  
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
= 100 V, V = 0 V, f = 1 MHz  
2350  
77  
3055  
100  
pF  
pF  
pF  
pF  
pF  
nC  
nC  
nC  
iss  
DS  
GS  
C
Output Capacitance  
oss  
C
Reverse Transfer Capacitance  
Output Capacitance  
0.68  
44  
rss  
C
V
DS  
V
DS  
V
DS  
= 380 V, V = 0 V, f = 1 MHz  
oss  
GS  
C
Effective Output Capacitance  
Total Gate Charge at 10 V  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
Equivalent Series Resistance  
= 0 V to 400 V, V = 0 V  
304  
60  
oss(eff.)  
GS  
Q
= 380 V, I = 10 A, V = 10 V  
78  
g(tot)  
D
GS  
(Note 4)  
Q
12  
gs  
gd  
Q
25  
ESR  
f = 1 MHz  
0.6  
SWITCHING CHARACTERISTICS  
t
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
V
= 380 V, I = 10 A, V = 10 V,  
25  
11  
60  
32  
ns  
ns  
ns  
ns  
d(on)  
DD  
g
D
GS  
R = 4.7  
t
r
(Note 4)  
t
62  
4.2  
134  
18  
d(off)  
t
f
SOURCEDRAIN DIODE CHARACTERISTICS  
I
Maximum Continuous Source to Drain Diode Forward Current  
Maximum Pulsed Source to Drain Diode Forward Current  
20.6  
61.8  
1.2  
A
A
S
I
SM  
V
SD  
Source to Drain Diode Forward Voltage  
Reverse Recovery Time  
V
V
= 0 V, I = 10 A  
V
GS  
SD  
t
rr  
= 400 V, I = 10 A,  
105  
515  
ns  
nC  
DD  
SD  
dI /dt = 100 A/s  
F
Q
Reverse Recovery Charge  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Essentially independent of operating temperature.  
www.onsemi.com  
3
 
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