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FCP4N60 参数 Datasheet PDF下载

FCP4N60图片预览
型号: FCP4N60
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道 SuperFET® MOSFET 600V, 3.9A, 1.2Ω]
分类和应用: 局域网开关脉冲晶体管
文件页数/大小: 9 页 / 1201 K
品牌: ONSEMI [ ONSEMI ]
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Typical Performance Characteristics (Continued)  
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.2  
1.1  
1.0  
*Notes :  
1. VGS = 0 V  
0.9  
*Notes :  
1. VGS = 10 V  
2. ID = 250µA  
2. ID = 2.0 A  
0.8  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [οC]  
TJ, Junction Temperature [oC]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
4
3
2
1
0
Operation in This Area  
is Limited by R DS(on)  
101  
10 us  
100 us  
1 ms  
10 ms  
100  
DC  
* Notes :  
1. TC = 25 o  
C
2. TJ = 150 o  
C
10-1  
3. Single Pulse  
100  
101  
102  
103  
25  
50  
75  
100  
125  
150  
TC, Case Temperature [oC]  
VDS, Drain-Source Voltage [V]  
Figure 11. Transient Thermal Response Curve  
D=0.5  
100  
0.2  
0.1  
* Notes  
:
1. ZθJC(t) = 2.5 oC/W Max.  
2. D uty Factor, D =t1/t2  
0.05  
3. TJM - TC = PDM * ZθJC(t)  
10-1  
0.02  
0.01  
PDM  
t1  
t2  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1, Square W ave Pulse Duration [sec]  
www.fairchildsemi.com  
©2008 Fairchild Semiconductor Corporation  
FCP4N60 Rev. C1  
4
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