¡ Semiconductor
MSM7702-01/02/03
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
(VDD = 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Symbol
Condition
Min.
—
Typ.
5
Max.
9
Unit
mA
IDD1 Operating mode, No signal
IDD2 Power-down mode, PDN = 0
—
0.01
0.05
mA
Power Supply Current
Power-save mode, PDN = 1,
IDD3
—
1.2
—
—
3.0
mA
V
XSYNC Æ OFF
0.45 ¥
Input High Voltage
Input Low Voltage
VIH
VIL
—
—
VDD
VDD
0.16 ¥
VDD
2.0
0.5
0.4
10
0.0
V
High Level Input Leakage Current
Low Level Input Leakage Current
Digital Output Low Voltage
Digital Output Leakage Current
Input Capacitance
IIH
IIL
—
—
—
—
0.0
—
—
—
—
—
0.2
—
5
mA
mA
V
VOL Pull-up resistance > 500 W
IO
PCMOUT
mA
pF
CIN
—
—
Analog Input Resistance
RIN AIN+, AIN–
10
—
MW
Transmit Analog Interface Characteristics
(VDD = 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Input Resistance
Symbol
Condition
Min.
10
Typ.
—
Max.
—
Unit
MW
kW
pF
RINX AIN+, AIN–
Output Load Resistance
Output Load Capacitance
Output Amplitude
RLGX GSX with respect to SG
20
—
—
CLGX
VOGX
—
—
30
–0.7
–20
—
+0.7
+20
V
Offset Voltage
VOSGX
Gain = 1
—
mV
Receive Analog Interface Characteristics
(VDD = 2.7 V to 3.8 V, Ta = –30°C to +85°C)
Parameter
Output Load Resistance
Output Load Capacitance
Output Amplitude
Symbol
Condition
Min.
1.2
Typ.
—
Max.
—
Unit
kW
pF
RLAO AOUT with respect to SG
CLAO AOUT with respect to SG
VOAO AOUT with respect to SG
VOSAO AOUT with respect to SG
—
—
50
–1.0
–100
—
+1.0
+100
V
Offset Voltage
—
mV
9/17
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