TDA8922C
NXP Semiconductors
2 × 75 W class-D power amplifier
010aaa575
(1)
100
P
o
(W)
80
(2)
(3)
60
40
20
0
(4)
V
V
(V)
(V)
12.5
−12.5
17.5
−17.5
22.5
−22.5
27.5
−27.5
32.5
−32.5
DD
SS
Infinite heat sink used.
fi = 1 kHz, fosc = 350 kHz (external oscillator).
(1) THD + N = 10 %, 6 Ω.
(2) THD + N = 10 %, 8 Ω
(3) THD + N = 0.5 %, 6 Ω
(4) THD + N = 0.5 %, 8 Ω.
Fig 21. Output power as a function of supply voltage, SE configuration
010aaa576
200
P
o
(W)
160
(1)
(2)
120
80
40
0
V
V
(V)
(V)
12.5
−12.5
15
−15
17.5
−17.5
20
−20
22.5
−22.5
25
−25
27.5
−27.5
DD
SS
Infinite heat sink used.
fi = 1 kHz, fosc = 350 kHz (external oscillator).
(1) THD + N = 10 %, 8 Ω.
(2) THD + N = 0.5 %, 8 Ω.
Fig 22. Output power as a function of supply voltage, BTL configuration
TDA8922C_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 7 September 2009
28 of 40
NXP [ NXP ]
