TDA8922C
NXP Semiconductors
2 × 75 W class-D power amplifier
010aaa573
30
20
10
0
P
(W
D
(1)
(2)
(3)
−2
−1
1
2
3
10
10
1
10
10
10
P
(W)
o
fi = 1 kHz; fosc = 350 kHz (external oscillator).
(1) 2 × 6 Ω SE configuration; VDD = 32 V; VSS = −32 V.
(2) 2 × 8 Ω SE configuration; VDD = 32 V; VSS = −32 V.
(3) 1 × 8 Ω BTL configuration; VDD = 25 V; VSS = −25 V.
Fig 19. Power dissipation as a function of output power per channel, SE configuration
010aaa574
(3)
100
(1)
η
(2)
(%)
80
60
40
20
0
0
20
40
60
80
100
120
140
160
P
(W)
o
fi = 1 kHz, fosc = 350 kHz (external oscillator).
(1) 2 × 8 Ω SE configuration; VDD = 32 V; VSS = −32 V.
(2) 2 × 6 Ω SE configuration; VDD = 32 V; VSS = −32 V.
(3) 1 × 8 Ω BTL configuration; VDD = 25 V; VSS = −25 V.
Fig 20. Efficiency as a function of output power per channel, SE configuration
TDA8922C_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 7 September 2009
27 of 40
NXP [ NXP ]
