TDA8922C
NXP Semiconductors
2 × 75 W class-D power amplifier
010aaa569
10
THD+N
(%)
1
−1
10
(1)
(2)
−2
10
−3
10
2
3
4
5
10
10
10
10
10
f (Hz)
i
VDD = 30 V, VSS = −30 V, fosc = 350 kHz (external oscillator), 2 × 8 Ω SE configuration.
(1) Po = 1 W.
(2) Po = 10 W.
Fig 15. THD + N as a function of frequency, SE configuration with 2 × 8 Ω load
010aaa570
10
THD+N
(%)
1
−1
10
(1)
−2
10
(2)
−3
10
2
3
4
5
10
10
10
10
10
f (Hz)
i
VDD = 25 V, VSS = −25 V, fosc = 350 kHz (external oscillator), 1 × 8 Ω BTL configuration.
(1) Po = 1 W.
(2) Po = 10 W.
Fig 16. THD + N as a function of frequency, BTL configuration with 1 × 8 Ω load
TDA8922C_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 7 September 2009
25 of 40
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