TDA8920C
NXP Semiconductors
2 × 110 W class-D power amplifier
001aai859
140
120
100
80
P
o
(W)
(1)
(2)
(3)
(4)
60
40
20
0
12.5
17.5
22.5
27.5
32.5
V
(V)
P
Infinite heat sink used.
fi = 1 kHz, fosc = 350 kHz.
(1) THD + N = 10 %, 4 Ω.
(2) THD + N = 0.5 %, 4 Ω; THD + N = 10 %, 6 Ω.
(3) THD + N = 10 %, 8 Ω; THD + N = 0.5 %, 6 Ω
(4) THD + N = 0.5 %, 8 Ω.
Fig 21. Output power as a function of supply voltage, SE configuration
001aai860
300
P
o
(W)
(1)
(2)
200
(3)
(4)
100
0
12.5
17.5
22.5
27.5
32.5
V
(V)
P
Infinite heat sink used.
fi = 1 kHz, fosc = 350 kHz.
(1) THD + N = 10 %, 8 Ω.
(2) THD + N = 0.5 %, 8 Ω.
(3) THD + N = 10 %, 16 Ω.
(4) THD + N = 0.5 %, 16 Ω.
Fig 22. Output power as a function of supply voltage, BTL configuration
TDA8920C_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 June 2009
28 of 39
NXP [ NXP ]
