TDA8920C
NXP Semiconductors
2 × 110 W class-D power amplifier
010aaa536
10
THD
(%)
1
−1
10
10
10
(1)
(2)
−2
−3
2
3
4
5
10
10
10
10
10
f (Hz)
i
VP = ±30 V, fosc = 350 kHz, 2 × 6 Ω SE configuration.
(1) Po = 1 W.
(2) Po = 10 W.
Fig 15. THD + N as a function of frequency, SE configuration with 2 × 6 Ω load
010aaa537
10
THD
(%)
1
−1
10
(1)
(2)
−2
10
−3
10
2
3
4
5
10
10
10
10
10
f (Hz)
i
VP = ±30 V, fosc = 350 kHz, 1 × 8 Ω BTL configuration.
(1) Po = 1 W.
(2) Po = 10 W.
Fig 16. THD + N as a function of frequency, BTL configuration with 1 × 8 Ω load
TDA8920C_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 11 June 2009
25 of 39
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