TDA6650TT; TDA6651TT
NXP Semiconductors
5 V mixer/oscillator and low noise PLL synthesizer
[2] The drive level is expected with a 50 Ω series resistance of the crystal at series resonance. The drive level will be different with other
series resistance values.
[3] The VXTOUT level is measured when the pin XTOUT is loaded with 5 kΩ in parallel with 10 pF.
[4] The RF frequency range is defined by the oscillator frequency range and the Intermediate Frequency (IF).
[5] The 1 % cross modulation performance is measured with AGC detector turned off (AGC bits set to 110).
[6] Channel SO2 beat is the interfering product of fRFpix, fIF and fosc of channel SO2; fbeat = 37.35 MHz. The possible mechanisms are:
fosc − 2 × fIFpix or 2 × fRFpix − fosc.
[7] The IF output signal stays stable within the range of the step frequency for any RF input level up to 120 dBµV.
[8] (N + 5) − 1 MHz pulling is the input level of channel N + 5, at frequency 1 MHz lower, causing 100 kHz FM sidebands 30 dB below the
wanted carrier.
[9] Limits are related to the tank circuits used in Figure 27 and 28 for digital application or Figure 29 and 30 for hybrid application.
Frequency bands may be adjusted by the choice of external components.
[10] The frequency shift is defined as a change in oscillator frequency when the supply voltage varies from VCC = 5 V to 4.5 V or from
VCC = 5 V to 5.25 V. The oscillator is free running during this measurement.
[11] The frequency drift is defined as a change in oscillator frequency when the ambient temperature varies from Tamb = 25 °C to 50 °C or
from Tamb = 25 °C to 0 °C. The oscillator is free running during this measurement.
[12] The supply ripple susceptibility is measured in the measurement circuit according to Figure 27, 28, 29 and 30 using a spectrum
analyzer connected to the IF output. An unmodulated RF signal is applied to the test board RF input. A sine wave signal with a
frequency of 500 kHz is superimposed onto the supply voltage. The amplitude of this ripple signal is adjusted to bring the 500 kHz
sidebands around the IF carrier to a level of −53.5 dB with respect to the carrier.
[13] This is the level of divider interferences close to the IF frequency. For example channel S3: fosc = 158.15 MHz, 1⁄4 fosc = 39.5375 MHz.
The low and mid band inputs must be left open (i.e. not connected to any load or cable); the high band inputs are connected to an
hybrid.
[14] Crystal oscillator interference means the 4 MHz sidebands caused by the crystal oscillator.
[15] The step frequency rejection is the level of step frequency sidebands (e.g. 166.67 kHz) related to the carrier.
[16] This is the level of the 9th and 11th harmonics of the 4 MHz crystal oscillator into the IF output.
[17] Pin AGC (pin 9 for TDA6650TT, pin 30 for TDA6651TT) must not be connected to a voltage higher than 3.6 V.
1
2
0.5
0.2
5
10
∞
10
− j
+ j
10
5
2
1
0.5
0.2
40 MHz
0
200 MHz
5
0.2
2
0.5
mce160
1
Fig 5. Input admittance (s11) of the low band mixer (40 MHz to 200 MHz); Yo = 20 mS
TDA6650TT_6651TT_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 10 January 2007
29 of 54
NXP [ NXP ]
