TDA6650TT; TDA6651TT
NXP Semiconductors
5 V mixer/oscillator and low noise PLL synthesizer
Table 22. Characteristics…continued
VCCA = VCCD = 5 V; Tamb = 25 °C; values are given for an asymmetrical IF output loaded with a 75 Ω load or with a
symmetrical IF output loaded with 1.25 kΩ; positive currents are entering the IC and negative currents are going out of the IC;
the performances of the circuits are measured in the measurement circuits Figure 27 and 28 for digital application or in the
measurement circuits Figure 29 and 30 for hybrid application; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
[13]
[14]
[15]
INTdiv
divider interferences in
IF level
worst case
-
-
20
dBµV
INTxtal
crystal oscillator
interferences rejection
VIF = 100 dBµV; worst case in the frequency
range
-
-
−50
dBc
INTf(step)
step frequency rejection measured in digital application for DVB-T;
fstep = 166.67 kHz; IF = 36.125 MHz
TDA6650TT/C3; TDA6651TT/C3;
-
-
−50
dBc
TDA6650TT/C3/S2; TDA6651TT/C3/S2
TDA6651TT/C3/S3
-
-
-
-
−35
−57
dBc
dBc
[15]
[15]
[15]
[16]
measured in hybrid application for DVB-T;
fstep = 166.67 kHz; IF = 36.125 MHz
measured in hybrid application for PAL;
-
-
-
-
-
-
−57
−57
45
dBc
f
step = 62.5 kHz; IF = 38.9 MHz
measured in hybrid application for FM;
step = 50 kHz; IF = 38.9 MHz
dBc
f
INTXTH
crystal oscillator
harmonics in the
IF frequency
dBµV
AGC output (IF amplifier in asymmetrical mode): pin AGC[17]
AGCTOP(p-p) AGC take-over point
(peak-to-peak level)
bits AL[2:0] = 000
122.5 124 125.5 dBµV
Isource(fast)
source current fast
7.5
9.0
11.6
µA
Isource(slow) source current slow
185
220 280
nA
Vo
output voltage
maximum level
TDA6650TT/C3; TDA6651TT/C3;
TDA6650TT/C3/S2; TDA6651TT/C3/S2
3.45
3.55 3.8
3.55 3.8
V
TDA6651TT/C3/S3
minimum level
3.3
0
V
V
-
0.1
Vo(dis)
output voltage with AGC bits AL[2:0] = 111
disabled
TDA6650TT/C3; TDA6651TT/C3;
3.45
3.55 3.8
3.55 3.8
V
TDA6650TT/C3/S2; TDA6651TT/C3/S2
TDA6651TT/C3/S3
3.3
-
V
VRF(slip)
RF voltage range to
-
0.5
dB
switch the AGC from
active to not active mode
VRML
VRMH
ILO
low threshold AGC
output voltage
AGC bit = 0 or AGC not active
AGC bit = 1 or AGC active
0
-
2.8
V
high threshold AGC
output voltage
3.2
−50
3.55 3.8
+50
V
leakage current
bits AL[2:0] = 110; 0 V < VAGC < 3.5 V
-
nA
[1] Important recommendation: to obtain the performances mentioned in this specification, the serial resistance of the crystal used with this
oscillator must never exceed 120 Ω. The crystal oscillator is guaranteed to operate at any supply voltage between 4.5 V and 5.5 V and
at any temperature between −20 °C and Tamb(max), as defined in Section 10.
TDA6650TT_6651TT_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 10 January 2007
28 of 54
NXP [ NXP ]
