Philips Semiconductors
Product specification
Dual N-channel enhancement mode
TrenchMOS
TM
transistor
PHN210T
6
Drain Current, ID (A)
10
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4 0.6 0.8
1
1.2 1.4 1.6
Drain-Source Voltage, VDS (V)
1.8
2
VGS = 20 V
Tj = 25 C
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
2
1
0
10 V
5V
5
Transconductance, gfs (S)
Tj = 25 C
4
150 C
3
0
1
2
3
4
5
6
7
Drain current, ID (A)
8
9
10
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
) ; parameter T
j
0.5
Drain-Source On Resistance, RDS(on) (Ohms)
3.2 V
3.4 V
3.6 V 3.8V
4V
4.2 V
Tj = 25 C
2
a
SOT223 30V Trench
Normalised RDS(ON) = f(Tj)
0.4
1.5
0.3
1
0.2
VGS =5 V
10V
20V
0
0
1
2
3
4
5
6
Drain Current, ID (A)
7
8
9
10
0.1
0.5
0
-50
0
50
Tj / C
100
150
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
VGS(TO) / V
4
Drain current, ID (A)
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Tj = 25 C
150 C
VDS > ID X RDS(ON)
3
max.
typ.
2
1
min.
0
-60 -40 -20
0
20
40 60
Tj / C
80 100 120 140
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
March 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
