Philips Semiconductors
Product specification
Dual N-channel enhancement mode
TrenchMOS
TM
transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source diode
current (per MOSFET)
Pulsed source diode current
(per MOSFET)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
T
a
= 25 ˚C
MIN.
-
-
I
F
= 1.25 A; V
GS
= 0 V
I
F
= 1.25 A; -dI
F
/dt = 100 A/µs;
V
GS
= 0 V; V
R
= 25 V
-
-
-
PHN210T
TYP. MAX. UNIT
-
-
0.82
69
55
2.2
14
1.2
-
-
A
A
V
ns
nC
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
100
Peak Pulsed Drain Current, IDM (A)
PHN210
10
RDS(on) = VDS/ ID
tp = 10 us
100 us
1 ms
1
10 ms
100 ms
0.1
10 s
0.01
0
20
40
60
80
100
Tamb / C
120
140
0.1
1
10
Drain-Source Voltage, VDS (V)
100
Fig.1. Normalised power dissipation.
PD% = 100⋅P
D
/P
D 25 ˚C
= f(T
a
)
Fig.3. Safe operating area. T
a
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
120
110
100
90
80
70
60
50
40
30
20
10
0
ID%
Normalised Current Derating
100
Zth j-a (K/W)
D = 0.5
10
0.2
0.1
0.05
1
0.02
P
D
0.1
single pulse
T
0.01
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
tp
D = tp/T
PHN210
0
20
40
60
80
100
Ambient temperature, Tamb (C)
120
140
Pulse width, tp (s)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I
D
/I
D 25 ˚C
= f(T
a
); conditions: V
GS
≥
10 V
Fig.4. Transient thermal impedance.
Z
th j-a
= f(t); parameter D = t
p
/T
March 1999
3
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
