NXP Semiconductors
HEF4017B
5-stage Johnson decade counter
Table 6.
Static characteristics
…continued
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter
I
OH
Conditions
V
DD
5V
5V
10 V
15 V
5V
10 V
15 V
15 V
5V
10 V
15 V
C
I
input
capacitance
-
T
amb
=
−40 °C
Min
HIGH-level
V
O
= 2.5 V
output current V = 4.6 V
O
V
O
= 9.5 V
V
O
= 13.5 V
I
OL
LOW-level
V
O
= 0.4 V
output current V = 0.5 V
O
V
O
= 1.5 V
I
I
I
DD
input leakage
current
supply current I
O
= 0 A;
V
I
= V
SS
or V
DD
−1.7
−0.64
−1.6
−4.2
0.64
1.6
4.2
-
-
-
-
-
Max
-
-
-
-
-
-
-
±0.1
5
10
20
-
T
amb
= 25
°C
Min
−1.4
−0.5
−1.3
−3.4
0.5
1.3
3.2
-
-
-
-
-
Max
-
-
-
-
-
-
-
±0.1
5
10
20
7.5
T
amb
= 85
°C
Min
−1.1
−0.36
−0.9
−2.4
0.36
0.9
2.4
-
-
-
-
-
Max
-
-
-
-
-
-
-
±1.0
150
300
600
-
T
amb
= 125
°C
Unit
Min
−1.1
−0.36
−0.9
−2.4
0.36
0.9
2.4
-
-
-
-
-
Max
-
-
-
-
-
-
-
±1.0
150
300
600
-
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
pF
11. Dynamic characteristics
Table 7.
Dynamic characteristics
T
amb
= 25
°
C; V
SS
= 0 V; for test circuit see
Symbol Parameter
t
PHL
HIGH to LOW
propagation delay
Conditions
V
DD
Extrapolation formula
113 ns + (0.55 ns/pF) C
L
44 ns + (0.23 ns/pF) C
L
32 ns + (0.16 ns/pF) C
L
118 ns + (0.55 ns/pF) C
L
44 ns + (0.23 ns/pF) C
L
32 ns + (0.16 ns/pF) C
L
88 ns + (0.55 ns/pF) C
L
39 ns + (0.23 ns/pF) C
L
27 ns + (0.16 ns/pF) C
L
Min
-
-
-
-
-
-
-
-
-
Typ
140
55
40
145
55
40
115
50
35
Max Unit
280
110
80
290
110
80
230
100
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
CP0, CP1
→
Q0 to Q9; 5 V
see
10 V
15 V
CP0, CP1
→
Q5-9;
see
5V
10 V
15 V
MR
→
Q1 to Q9;
see
5V
10 V
15 V
HEF4017B_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 9 December 2008
7 of 16
PHILIPS [ NXP SEMICONDUCTORS ]
