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HEF4049BT 参数 Datasheet PDF下载

HEF4049BT图片预览
型号: HEF4049BT
PDF下载: 下载PDF文件 查看货源
内容描述: HEX反相缓冲器 [Hex inverting buffers]
分类和应用:
文件页数/大小: 11 页 / 73 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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NXP Semiconductors
HEF4049B
Hex inverting buffers
Table 7.
Dynamic characteristics
…continued
V
SS
= 0 V; C
L
= 50 pF; t
r
= t
f
20 ns; T
amb
= 25
°
C; unless otherwise specified.
Symbol
t
THL
Parameter
HIGH to LOW output
transition time
Conditions
see
V
DD
5V
10 V
15 V
t
TLH
LOW to HIGH output
transition time
see
5V
10 V
15 V
[1]
Extrapolation formula
3 ns + (0.35 ns/pF)C
L
3 ns + (0.14 ns/pF)C
L
2 ns + (0.09 ns/pF)C
L
10 ns + (1.00 ns/pF)C
L
9 ns + (0.42 ns/pF)C
L
6 ns + (0.28 ns/pF)C
L
Min
-
-
-
-
-
-
Typ
20
10
7
60
30
20
Max
40
20
14
120
60
40
Unit
ns
ns
ns
ns
ns
ns
The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (C
L
in pF).
Table 8.
Dynamic power dissipation P
D
P
D
can be calculated from the formulas shown. V
SS
= 0 V; t
r
= t
f
20 ns; T
amb
= 25
°
C.
Symbol
P
D
Parameter
dynamic power
dissipation
V
DD
5V
10 V
15 V
Typical formula for P
D
(µW)
P
D
= 2500
×
f
i
+
Σ(f
o
×
C
L
)
×
V
DD2
P
D
= 11000
×
f
i
+
Σ(f
o
×
C
L
)
×
V
DD2
P
D
= 35000
×
f
i
+
Σ(f
o
×
C
L
)
×
V
DD2
where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
DD
= supply voltage in V;
Σ(C
L
×
f
o
) = sum of the outputs.
12. Waveforms
t
r
V
I
input
0V
t
f
90 %
V
M
10 %
t
PHL
t
PLH
V
OH
output
V
OL
90 %
V
M
10 %
t
THL
t
TLH
001aai336
Measurement points are given in
V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 5.
Table 9.
Input
V
M
0.5V
DD
Input (nA) to output (nY) propagation delays and transition times
Measurement points
Output
V
I
0 V to V
DD
V
M
0.5V
DD
V
X
0.1V
DD
V
Y
0.9V
DD
HEF4049B_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 11 November 2008
5 of 11