NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 5 A; T
j
= 150
°C;
see
I
F
= 5 A; see
I
F
= 10 A; see
I
R
reverse current
V
R
= 200 V
V
R
= 200 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A to V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
ramp recovery; I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs; see
step recovery; when switched from
I
F
= 0.5 A to I
R
= 1 A; measured at
I
R
= 0.25 A
I
RM
V
FR
peak reverse recovery
current
forward recovery
voltage
I
F
= 5 A to V
R
≥
30 V; dI
F
/dt = 50 A/µs;
see
I
F
= 1 A; dI
F
/dt = 10 A/µs; see
-
-
-
4
15
10
9
25
20
nC
ns
ns
Min
-
-
-
-
-
Typ
0.8
0.95
1.1
2
0.1
Max
0.895
1.1
1.25
10
0.2
Unit
V
V
V
µA
mA
Static characteristics
-
-
0.5
1
0.7
-
A
V
15
I
F
(A)
10
(1)
(2)
001aag978
(3)
5
0
0
0.5
1.0
V
F
(V)
1.5
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2. Forward current as a function of forward voltage
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
4 of 10
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