NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
8
P
tot
(W)
6
0.5
001aag976
6
P
tot
(W)
1.9
001aag977
δ
=1
a = 1.57
4
2.8
2.2
4
0.1
0.2
4.0
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
2
4
I
F(AV)
(A)
6
I
F(AV)
= I
F(RMS)
× √δ
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
5 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
