NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2.
Ordering information
Package
Name
BYQ28E-200
BYQ28ED-200
TO-220AB
DPAK
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Version
SOT78
SOT428
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
square waveform;
δ
= 1.0
square waveform;
δ
= 0.5;
T
mb
≤
119
°C;
both diodes conducting
t
p
= 25
µs;
square waveform;
δ
= 0.5;
T
mb
≤
119
°C;
per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
I
RM
I
RSM
T
stg
T
j
V
ESD
peak reverse recovery current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
all pins; human body model;
C = 250 pF; R = 1.5 kΩ
t
p
= 2
µs; δ
= 0.001
t
p
= 100
µs
Conditions
Min
-
-
-
-
-
-
-
-
-
−40
-
-
Max
200
200
200
10
10
50
55
0.2
0.2
+150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
Electrostatic discharge
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
2 of 10
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