BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
mbg447
006aab214
300
1.0
C
d
I
F
(pF)
(1)
(2)
(mA)
0.8
200
0.6
100
0.4
0.2
0
0
2
4
6
8
0
50
100
150
200
(°C)
V
R
(V)
T
amb
f = 1 MHz; Tamb = 25 C
FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Forward current as a function of ambient
temperature; derating curves
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
F
t
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
BAV23_SER_7
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Product data sheet
Rev. 07 — 19 March 2010
6 of 13
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