BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Ptot
Parameter
Conditions
Min
Max
Unit
[4]
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 C
-
250
mW
C
Tj
-
150
Tamb
65
65
+150
+150
C
Tstg
C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
-
-
-
-
500
360
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max Unit
VF
forward voltage
IF = 100 mA
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.25
100
100
2
V
IF = 200 mA
V
IR
reverse current
VR = 200 V
nA
A
pF
ns
VR = 200 V; Tj = 150 C
f = 1 MHz; VR = 0 V
Cd
trr
diode capacitance
[1]
reverse recovery time
50
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV23_SER_7
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
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