BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
mbg703
006aab212
2
10
600
I
FSM
(A)
I
F
(mA)
10
400
(2)
(3)
(4)
1
200
(1)
−1
10
0
2
3
4
1
10
10
10
10
0
0.4
0.8
1.2
1.6
t
(μs)
V
(V)
p
F
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
Based on square wave currents.
Tj = 25 C; prior to surge
(4)
Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab213
2
10
R
(μA)
(1)
(2)
I
10
1
−1
10
10
10
10
10
(3)
−2
−3
−4
−5
(4)
0
50
100
150
200
250
(V)
V
R
(1) Tamb = 150 C
(2) Tamb = 85 C
(3)
Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse voltage; typical values
BAV23_SER_7
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
5 of 13
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