BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
BAV23A
BAV23C
BAV23S
BAV23
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 4 leads
SOT23
-
SOT143B
4. Marking
Table 5.
Marking codes
Type number
BAV23A
Marking code[1]
*V0
*V9
*V5
*L3
BAV23C
BAV23S
BAV23
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VRRM
Parameter
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
250
V
VR
IF
reverse voltage
forward current
-
-
-
-
200
225
125
625
V
[1]
[2]
mA
mA
mA
IFRM
IFSM
repetitive peak forward
current
[3]
non-repetitive peak forward square wave
current
tp = 1 s
-
-
-
9
A
A
A
tp = 100 s
3
tp = 10 ms
1.7
BAV23_SER_7
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 19 March 2010
3 of 13
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