NXP Semiconductors
BAS16 series
High-speed switching diodes
1.4 Quick reference data
Table 2.
Symbol
Per diode
V
R
I
R
t
rr
[1]
Quick reference data
Parameter
reverse voltage
reverse current
reverse recovery time
V
R
= 80 V
Conditions
Min
-
-
-
Typ
-
-
-
Max
100
0.5
4
Unit
V
µA
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
006aaa144
Simplified outline
Graphic symbol
BAS16; BAS16T; BAS16W
3
1
3
2
006aaa764
BAS16H; BAS16J; BAS316; BAS516
1
2
cathode
anode
1
001aab540
2
1
2
006aab040
BAS16L
1
2
cathode
anode
1
2
1
2
006aab040
Transparent
top view
BAS16VV; BAS16VY
1
2
3
4
5
6
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
2
3
001aab555
6
5
4
6
5
4
1
2
3
006aab106
[1]
The marking bar indicates the cathode.
BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
2 of 20
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