Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min Max
= 500 mA, V = 0.5 Vdc,
GSB
Typ
Unit
(1,2)
Functional Tests (In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 63 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
DD
DQA
P
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
15.6
49.2
7.2
16.2
51.8
7.9
18.6
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–28.8
–27.2
(2)
Load Mismatch (In Freescale Doherty Test Fixture, 50 ohm system) I
= 500 mA, V
= 0.5 Vdc, f = 2140 MHz
GSB
DQA
VSWR 10:1 at 28 Vdc, 288 W Pulse Output Power
(3 dB Input Overdrive from 363 W Pulse Rated Power)
No Device Degradation
(2)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) V = 28 Vdc, I
= 500 mA, V = 0.5 Vdc,
GSB
DD
DQA
2110–2170 MHz Bandwidth
(3)
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
—
—
301
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
400
AM/PM
(Maximum value measured at the P3dB compression point across
–27
the 2110–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
100
0.2
—
MHz
res
Gain Flatness in 60 MHz Bandwidth @ P = 63 W Avg.
G
—
—
—
—
dB
out
F
Gain Variation over Temperature
G
0.012
dB/C
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P1dB
—
0.002
—
dB/C
(3)
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T21H360--24SR6
RF Device Data
Freescale Semiconductor, Inc.
3
NXP [ NXP ]
