Document Number: A2T21H360--24S
Rev. 0, 1/2015
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 2110 to
2170 MHz.
A2T21H360--24SR6
2100 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
(dB)
16.2
16.2
16.1
(%)
51.6
51.8
50.9
7.9
7.9
7.9
–28.5
–28.8
–29.5
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4L2L
(1)
6
5
VBW
A
Carrier
RF /V
1
2
RF /V
outA DSA
inA GSA
RF /V
inB GSB
RF /V
outB DSB
4
3
Peaking
(1)
VBW
B
(Top View)
Figure 1. Pin Connections
1. Device cannot operate with the V current
DD
supplied through pin 3 and pin 6.
A2T21H360--24SR6
Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
1
NXP [ NXP ]
