Table 8. Peaking Side Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, V
= 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
53.8
54.5
54.3
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2.40 – j5.79
2.25 + j5.71
1.80 – j4.30
1.91 – j4.27
1.96 – j4.34
14.8
54.8
300
–26
–27
–28
2.86 – j6.24
3.85 – j6.73
2.71 + j6.24
3.68 + j6.78
15.2
15.4
54.8
54.8
300
302
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
55.2
54.6
54.6
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2.40 – j5.79
2.33 + j6.08
1.77 – j4.50
1.89 – j4.66
1.95 – j4.72
12.6
55.5
353
–33
–34
–35
2.86 – j6.24
3.85 – j6.73
2.94 + j6.66
4.09 + j7.25
12.9
13.1
55.4
55.5
350
351
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 9. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 28 Vdc, V
= 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
64.5
64.4
64.1
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2.40 – j5.79
1.97 + j5.83
4.14 – j3.31
3.90 – j2.93
3.73 – j2.68
16.4
53.3
215
–33
–34
–35
2.86 – j6.24
3.85 – j6.73
2.41 + j6.35
3.27 + j6.92
16.7
16.9
53.4
53.3
218
214
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
64.2
64.4
64.0
Gain (dB)
(dBm)
(W)
(MHz)
2110
2140
2170
2.40 – j5.79
2.14 + j6.14
4.07 – j3.91
3.90 – j3.32
3.57 – j3.27
14.1
54.1
258
–40
–43
–43
2.86 – j6.24
3.85 – j6.73
2.65 + j6.74
3.74 + j7.38
14.6
14.7
54.1
54.3
257
267
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2T21H360--24SR6
RF Device Data
Freescale Semiconductor, Inc.
8
NXP [ NXP ]
