Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +65
–6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
CW Operation @ T = 25C
Derate above 25C
CW
278
1.2
W
W/C
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.33
C/W
JC
Case Temperature 73C, 63 W Avg., W--CDMA, 28 Vdc, I
= 500 mA, V
= 0.5 Vdc,
GSB
DQA
2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
B
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
(4)
On Characteristics -- Side A
Gate Threshold Voltage
V
0.8
1.4
0.1
1.2
1.9
0.2
1.6
2.2
0.3
Vdc
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 140 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 500 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.4 Adc)
V
DS(on)
GS
D
(4)
On Characteristics -- Side B
Gate Threshold Voltage
V
0.8
0.1
1.2
0.2
1.6
0.3
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 240 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 2.4 Adc)
V
DS(on)
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
A2T21H360--24SR6
RF Device Data
Freescale Semiconductor, Inc.
2
NXP [ NXP ]
