Table 9. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 28 Vdc, I
= 28 mA, I
= 182 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1A
DQ1B
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
53.1
54.9
52.8
Gain (dB)
(dBm)
(W)
(MHz)
2496
2590
2690
60.5 – j0.96
61.5 + j10.9
60.1 + j18.7
57.6 + j1.40
57.1 – j8.84
57.9 – j11.6
10.6 – j11.1
9.99 – j10.6
8.28 – j10.5
31.9
44.5
28
–6
–8
–9
32.0
31.6
44.5
44.1
28
26
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
55.0
56.1
54.9
Gain (dB)
(dBm)
(W)
(MHz)
2496
2590
2690
60.5 – j0.96
55.6 – j1.26
10.4 – j11.5
9.79 – j11.2
8.61 – j11.3
29.8
45.4
35
–10
–14
–17
61.5 + j10.9
60.1 + j18.7
53.7 – j8.80
54.8 – j8.94
29.8
29.5
45.4
45.0
35
32
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 10. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
V
= 28 Vdc, I
= 28 mA, I
= 182 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1A
DQ1B
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
59.1
60.4
59.0
Gain (dB)
(dBm)
(W)
(MHz)
2496
2590
2690
60.5 – j0.96
61.5 + j10.9
60.1 + j18.7
60.8 + j0.12
59.4 – j12.2
57.9 – j16.6
15.3 – j5.12
12.3 – j3.64
9.70 – j5.83
32.8
43.5
22
–8
–9
–9
33.0
32.7
43.2
43.3
21
21
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
60.0
61.5
60.4
Gain (dB)
(dBm)
(W)
(MHz)
2496
2590
2690
60.5 – j0.96
58.6 – j1.83
14.7 – j5.71
12.1 – j4.46
9.51 – j5.64
30.8
44.5
28
–10
–14
–17
61.5 + j10.9
60.1 + j18.7
56.0 – j11.9
54.7 – j14.0
30.9
30.7
44.3
44.1
27
26
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
10