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A2I25H060NR1 参数 Datasheet PDF下载

A2I25H060NR1图片预览
型号: A2I25H060NR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 31 页 / 1058 K
品牌: NXP [ NXP ]
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P3dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2300 MHz  
–2  
–4  
–2  
44  
44.5  
45  
45.5  
44  
46  
50  
54  
48  
45.5  
52  
42  
–4  
–6  
47  
46.5  
56  
–6  
46  
47.5  
P
P
P
E
E
–8  
–8  
E
–10  
–10  
45.5  
45  
–12  
–14  
–12  
–14  
44  
44.5  
3
4
6
7
8
9
10  
11  
12  
3
4
6
7
8
9
10  
11  
12  
2
5
2
5
REAL ()  
REAL ()  
Figure 43. P3dB Load Pull Efficiency Contours (%)  
Figure 42. P3dB Load Pull Output Power Contours (dBm)  
–2  
–2  
16  
17.5  
16.5  
18.5  
19  
–4  
–6  
–4  
–6  
17 18  
19.5  
E
–50  
–52  
P
P
–8  
–8  
E
–48  
–46  
–10  
–10  
–44  
–42  
–38  
–36  
–12  
–14  
–12  
–14  
–40  
17  
3
17.5  
17.5  
11  
4
6
7
8
9
10  
12  
3
4
6
7
8
9
10  
11  
12  
2
5
2
5
REAL ()  
REAL ()  
Figure 44. P3dB Load Pull Gain Contours (dB)  
Figure 45. P3dB Load Pull AM/PM Contours ()  
NOTE:  
P
E
= Maximum Output Power  
= Maximum Drain Efficiency  
Gain  
Drain Efficiency  
Linearity  
Output Power  
A2I25H060NR1 A2I25H060GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
23  
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