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A2I25H060NR1 参数 Datasheet PDF下载

A2I25H060NR1图片预览
型号: A2I25H060NR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 31 页 / 1058 K
品牌: NXP [ NXP ]
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P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2300 MHz  
–2  
–4  
–2  
48  
50  
45.5  
45  
52  
45  
54  
60  
44  
46  
44  
56  
58  
–4  
–6  
46.5  
47  
–6  
P
P
–8  
–8  
E
E
–10  
–10  
46  
45.5  
45  
–12  
–14  
–12  
–14  
44  
44.5  
44.5  
10  
3
4
6
7
8
9
11  
12  
3
4
6
7
8
9
10  
11  
12  
2
5
2
5
REAL ()  
REAL ()  
Figure 39. P1dB Load Pull Efficiency Contours (%)  
Figure 38. P1dB Load Pull Output Power Contours (dBm)  
–2  
18  
–2  
19.5  
20  
21  
20.5  
18.5  
–4  
–4  
–6  
19  
–6  
21.5  
–40  
–38  
P
P
–8  
–8  
E
E
–36  
–34  
–32  
–10  
–10  
–26  
–24  
–28  
–30  
–12  
–14  
–12  
–14  
19.5  
19  
3
4
6
7
8
9
10  
11  
12  
3
4
6
7
8
9
10  
11  
12  
2
5
2
5
REAL ()  
REAL ()  
Figure 40. P1dB Load Pull Gain Contours (dB)  
Figure 41. P1dB Load Pull AM/PM Contours ()  
NOTE:  
P
E
= Maximum Output Power  
= Maximum Drain Efficiency  
Gain  
Drain Efficiency  
Linearity  
Output Power  
A2I25H060NR1 A2I25H060GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
22  
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