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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M58LT128HST, M58LT128HSB  
Table 20. DC characteristics - currents  
Symbol  
ILI  
Parameter  
Input leakage current  
Output leakage current  
Test Condition  
0V VIN VDDQ  
0V VOUT VDDQ  
Typ  
Max Unit  
1
1
µA  
µA  
ILO  
Supply current  
Asynchronous Read (f=5 MHz)  
E = VIL, G = VIH  
14  
16  
mA  
4 word  
8 word  
13  
15  
17  
21  
16  
19  
22  
23  
25  
17  
19  
21  
26  
19  
23  
26  
28  
75  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
µA  
Supply current  
Synchronous Read (f = 40 MHz)  
16 word  
IDD1  
Continuous  
4 word  
8 word  
Supply current  
Synchronous Read (f = 52 MHz)  
16 word  
Continuous  
RP = VSS 0.2V  
IDD2  
IDD3  
Supply current (Reset)  
E = VDDQ 0.2V  
K=VSS  
Supply current (Standby)  
25  
25  
75  
75  
µA  
µA  
Supply current (Automatic  
Standby)  
IDD4  
E = VIL, G = VIH  
V
PP = VPPH  
8
10  
8
20  
25  
20  
25  
mA  
mA  
mA  
mA  
Supply current (Program)  
Supply current (Erase)  
V
PP = VDD  
(1)  
IDD5  
VPP = VPPH  
VPP = VDD  
10  
Program/erase in one bank,  
Asynchronous Read in another  
bank  
24  
41  
mA  
Supply current  
(1),(2)  
IDD6  
(Dual operations)  
Program/erase in one bank,  
Synchronous Read (continuous  
f=52 MHz) in another bank  
33  
25  
53  
75  
mA  
µA  
E = VDDQ 0.2V  
K=VSS  
Supply current Program/Erase  
Suspended (standby)  
(1)  
IDD7  
V
PP = VPPH  
2
5
5
5
5
5
5
mA  
µA  
mA  
µA  
µA  
µA  
VPP supply current (Program)  
VPP supply current (Erase)  
VPP = VDD  
VPP = VPPH  
VPP = VDD  
VPP VDD  
VPP VDD  
0.2  
2
(1)  
IPP1  
0.2  
0.2  
0.2  
IPP2  
VPP supply current (Read)  
(1)  
VPP supply current (Standby)  
IPP3  
1. Sampled only, not 100% tested.  
2. VDD Dual Operation current is the sum of Read and Program or Erase currents.  
56/110  
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