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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M58LT128HST, M58LT128HSB  
12  
DC and AC parameters  
This section summarizes the operating measurement conditions, and the DC and AC  
characteristics of the device. The parameters in the DC and AC characteristics tables that  
follow are derived from tests performed under the measurement conditions summarized in  
Table 18: Operating and AC measurement conditions. Designers should check that the  
operating conditions in their circuit match the operating conditions when relying on the  
quoted parameters.  
Table 18. Operating and AC measurement conditions  
M58LT128HST/B  
Parameter  
85  
Units  
Min  
Max  
V
DD supply voltage  
DDQ supply voltage  
1.7  
2.7  
2.0  
3.6  
V
V
V
VPP supply voltage (factory environment)  
VPP supply voltage (application environment)  
Ambient operating temperature  
Load capacitance (CL)  
8.5  
9.5  
V
–0.4  
–40  
VDDQ+0.4  
85  
V
°C  
pF  
ns  
V
30  
Input rise and fall times  
5
Input pulse voltages  
0 to VDDQ  
VDDQ/2  
Input and output timing ref. voltages  
V
Figure 7.  
AC measurement I/O waveform  
V
DDQ  
V
/2  
DDQ  
0V  
AI06161  
54/110  
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