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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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Program and erase times and endurance cycles  
M58LT128HST, M58LT128HSB  
(continued)  
(1) (2)  
Table 16. Program/erase times and endurance cycles  
Typicalafter  
100kW/E  
Cycles  
Parameter  
Condition  
Min  
Typ  
Max Unit  
Parameter block (16 Kword)  
Main block (64 Kword)  
0.4  
1
2.5  
4
s
s
Erase  
Word program  
10  
170  
µs  
Single word  
Buffer enhanced  
factory program(4)  
2.5  
80  
µs  
µs  
µs  
ms  
ms  
s
Buffer program  
Buffer (32 words)  
Buffer enhanced  
factory program  
80  
Program(3)  
Buffer program  
160  
160  
1.28  
1.28  
Main Block (64  
Kwords)  
Buffer enhanced  
factory program  
Buffer program  
Bank (8 Mbits)  
Buffer enhanced  
factory program  
s
Main blocks  
1000 cycles  
2500 cycles  
ms  
Program/erase cycles  
(per block)  
Parameter blocks  
Main blocks  
16  
4
Blank check  
Parameter blocks  
ms  
1. TA = –40 to 85°C; VDD = 1.7 V to 2 V; VDDQ = 2.7 V to 3.6 V.  
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling  
execution).  
3. Excludes the time needed to execute the command sequence.  
4. This is an average value on the entire device.  
52/110  
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