Program and erase times and endurance cycles
M58LT128HST, M58LT128HSB
(continued)
(1) (2)
Table 16. Program/erase times and endurance cycles
Typicalafter
100kW/E
Cycles
Parameter
Condition
Min
Typ
Max Unit
Parameter block (16 Kword)
Main block (64 Kword)
0.4
1
2.5
4
s
s
Erase
Word program
10
170
µs
Single word
Buffer enhanced
factory program(4)
2.5
80
µs
µs
µs
ms
ms
s
Buffer program
Buffer (32 words)
Buffer enhanced
factory program
80
Program(3)
Buffer program
160
160
1.28
1.28
Main Block (64
Kwords)
Buffer enhanced
factory program
Buffer program
Bank (8 Mbits)
Buffer enhanced
factory program
s
Main blocks
1000 cycles
2500 cycles
ms
Program/erase cycles
(per block)
Parameter blocks
Main blocks
16
4
Blank check
Parameter blocks
ms
1. TA = –40 to 85°C; VDD = 1.7 V to 2 V; VDDQ = 2.7 V to 3.6 V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
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