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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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M58LT128HST, M58LT128HSB  
Program and erase times and endurance cycles  
10  
Program and erase times and endurance cycles  
The program and erase times and the number of program/erase cycles per block are shown  
in Table 16. Exact erase times may change depending on the memory array condition. The  
best case is when all the bits in the block are at ‘0’ (preprogrammed). The worst case is  
when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is  
negligible with respect to the erase time. In the M58LT128HST/B the maximum number of  
program/erase cycles depends on the V voltage supply used.  
PP  
(1) (2)  
Table 16. Program/erase times and endurance cycles  
Typicalafter  
100kW/E  
Cycles  
Parameter  
Condition  
Min  
Typ  
Max Unit  
Parameter block (16 Kword)  
0.4  
1.2  
1.5  
12  
12  
384  
768  
5
1
3
2.5  
4
s
s
Erase  
Preprogrammed  
Main block (64  
Kword)  
Not preprogrammed  
Word program  
4
s
180  
180  
µs  
Single word  
Buffer program  
µs  
Program(3)  
Buffer (32 words) (Buffer Program)  
Main block (64 Kword)  
Program  
µs  
ms  
µs  
10  
20  
Suspend latency  
Erase  
5
µs  
Main blocks  
100,000  
100,000  
cycles  
cycles  
Program/erase cycles  
(per block)  
Parameter blocks  
51/110  
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