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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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Bus operations  
M58LT128HST, M58LT128HSB  
3.5  
Standby  
Standby disables most of the internal circuitry, allowing a substantial reduction of the current  
consumption. The memory is in Standby when Chip Enable and Reset are at V . The  
IH  
power consumption is reduced to the standby level I  
and the outputs are set to high  
DD3  
impedance, independently from the Output Enable or Write Enable inputs. If Chip Enable  
switches to V during a Program or Erase operation, the device enters Standby mode when  
IH  
finished.  
3.6  
Reset  
During Reset mode the memory is deselected and the outputs are high impedance. The  
memory is in Reset mode when Reset is at V . The power consumption is reduced to the  
IL  
Reset level, independently from the Chip Enable, Output Enable, or Write Enable inputs. If  
Reset is pulled to V during a Program or Erase, this operation is aborted and the memory  
SS  
content is no longer valid.  
(1)  
Table 3.  
Bus operations  
Operation  
E
G
W
L
RP  
WAIT(2)  
DQ15-DQ0  
(3)  
Bus Read  
Bus Write  
VIL  
VIL  
VIL  
VIL  
VIH  
X
VIL  
VIH  
X
VIH  
VIL  
VIH  
VIH  
X
VIL  
VIL  
VIH  
VIH  
VIH  
VIH  
VIH  
VIL  
Data Output  
(3)  
Data Input  
Address Latch  
Output Disable  
Standby  
VIL  
Data Output or Hi-Z(4)  
VIH  
X
X
X
X
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Hi-Z  
Reset  
X
X
1. X = ‘Don't care’.  
2. WAIT signal polarity is configured using the Set Configuration Register command.  
3. L can be tied to VIH if the valid address has been previously latched.  
4. Depends on G.  
16/110  
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