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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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Signal descriptions  
M58LT128HST, M58LT128HSB  
2.13  
VSS ground  
V
ground is the reference for the core supply. It must be connected to the system ground.  
SS  
2.14  
VSSQ ground  
V
ground is the reference for the input/output circuitry driven by V  
. V  
must be  
SSQ  
SSQ  
DDQ  
connected to V  
SS  
Note:  
Each device in a system should have V , V  
and V decoupled with a 0.1µF ceramic  
DD DDQ PP  
capacitor close to the pin (high-frequency, inherently low inductance capacitors should be as  
close as possible to the package). See Figure 8: AC measurement load circuit. The PCB  
track widths should be sufficient to carry the required V program and erase currents.  
PP  
14/110  
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