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M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE80  
Instructions  
6.9  
Page write (PW)  
The page write (PW) instruction allows bytes to be written in the memory. Before it can be  
accepted, a write enable (WREN) instruction must previously have been executed. After the  
write enable (WREN) instruction has been decoded, the device sets the write enable latch  
(WEL).  
The page write (PW) instruction is entered by driving Chip Select (S) Low, followed by the  
instruction code, three address bytes and at least one data byte on serial data input (D). The  
rest of the page remains unchanged if no power failure occurs during this write cycle.  
The page write (PW) instruction performs a page erase cycle even if only one byte is  
updated.  
If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding  
the addressed page boundary roll over, and are written from the start address of the same  
page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S)  
must be driven Low for the entire duration of the sequence.  
The instruction sequence is shown in Figure 15.  
If more than 256 bytes are sent to the device, previously latched data are discarded and the  
last 256 data bytes are guaranteed to be written correctly within the same page. If less than  
256 data bytes are sent to device, they are correctly written at the requested addresses  
without having any effects on the other bytes of the same page.  
For optimized timings, it is recommended to use the page write (PW) instruction to write all  
consecutive targeted bytes in a single sequence versus using several page write (PW)  
sequences with each containing only a few bytes.  
Chip Select (S) must be driven High after the eighth bit of the last data byte has been  
latched in, otherwise the page write (PW) instruction is not executed.  
As soon as Chip Select (S) is driven High, the self-timed page write cycle (whose duration is  
t
) is initiated. While the page write cycle is in progress, the status register may be read to  
PW  
check the value of the write in progress (WIP) bit. The write in progress (WIP) bit is 1 during  
the self-timed page write cycle, and is 0 when it is completed. At some unspecified time  
before the cycle is complete, the write enable latch (WEL) bit is reset.  
A page write (PW) instruction applied to a page that is hardware or software protected is not  
executed.  
Any page write (PW) instruction, while an erase, program or write cycle is in progress, is  
rejected without having any effects on the cycle that is in progress.  
If Reset (Reset) is driven Low while a page write (PW) cycle is in progress, the page write  
cycle is interrupted and the programmed data may be corrupted (see Table 15: Device  
status after a Reset Low pulse). On Reset going Low, the device enters the reset mode and  
a time of t  
is then required before the device can be re-selected by driving Chip Select  
RHSL  
(S) Low. For the value of t  
see Table 26: Timings after a Reset Low pulse in Section 11:  
RHSL  
DC and AC parameters.  
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