Numonyx™ Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
7.2
Program, Erase, Block-Lock Specifications
Table 13: Configuration Performance
(8)
#
Symbol
Parameter
Typ
Max
Unit
Notes
Aligned 16 Words / 32 Bytes
Aligned 256 Words
128
TBD
654
µs
us
1,2,3,4,5,6,7
1,2,3,4,5,6,7
t
WHQV7
EHQV7
W16
Buffer Program Time
Block Program Time
t
TBD
175
Byte Program Time (Using Word/Byte
Program Command
40
µs
1,2,3,4
t
t
WHQV3
EHQV3
W16
Aligned 16 Words / 32 Bytes
Aligned 256 Words
0.53
TBD
2.4
sec
sec
1,2,3,4
1,2,3,4
TBD
t
t
t
t
WHQV4
EHQV4
W16
W16
W16
W16
Block Erase Time
1.0
50
4.0
60
sec
µs
1,2,3,4
1,2,3,4,9
1,2,3,4,9
1,2,3,9
t
WHQV5
Set Lock-Bit Time
t
EHQV5
WHQV6
Clear Block Lock-Bits Time
0.5
15
0.70
20
sec
µs
t
EHQV6
WHRH1
Program Suspend Latency Time to Read
t
EHRH1
t
t
WHRH
EHRH
W16
W17
Erase Suspend Latency Time to Read
STS Pulse Width Low Time
15
20
—
µs
ns
1,2,3,9
1
t
500
STS
Notes:
1.
Typical values measured at T = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change
A
based on device characterization.
2.
3.
4.
5.
6.
7.
8.
9.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Excludes system-level overhead.
These values are valid when the buffer is full, and the start address is aligned.
Effective per-byte program time (t
Effective per-word program time (t
, t
) is 4µs/byte (256-Byte buffer, typical).
) is 8µs/word (256-Word buffer, typical).
WHQV1 EHQV1
, t
WHQV2 EHQV2
Max values are measured at worst case temperature, data pattern and V corner after 100k cycles (except as noted).
Max values are expressed at +25 °C or -40 °C.
CC
7.3
Reset Specifications
Figure 12: AC Waveform for Reset Operation
STS (R)
P1
P2
RP# (P)
P3
Vcc
Note: STS is shown in its default mode (RY/BY#).
Datasheet
28
May 2009
208032-01
NUMONYX [ NUMONYX B.V ]
