SM5006 series
Electrical Characteristics
5006×N series
3V operation: V = 2.7 to 3.6 V, V = 0 V, Ta = −20 to 80 °C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
–
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
0.4
10
10
–
OL
V
V
= V
= V
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
2.0
–
–
V
V
IH
V
–
0.5
IL
SM5006ANCS
CF5006ANC
SM5006BNCS
CF5006BNC
f = 30MHz
–
8
16
f = 30MHz,
Ta = –10 to 70°C
SM5006CNCS
CF5006CNC
–
–
8
16
26
SM5006ANDS
CF5006AND
f = 50MHz
13
INHN = open,
Measurement cct 3,
load cct 1,
SM5006BNES
CF5006BNE
SM5006CNES
CF5006CNE
SM5006DNES
CF5006DNE
Current consumption
I
mA
DD
f = 70MHz
–
15
30
V = 3.0 to 3.6V,
DD
C = 15pF
L
SM5006CNDS
CF5006CND
SM5006DNCS
CF5006DNC
f = 40MHz,
Ta = –10 to 70°C
–
–
11
20
22
40
SM5006ANES
CF5006ANE
SM5006ANFS
CF5006ANF
f = 70MHz
INHN pull-up resistance
R
Measurement cct 4
Measurement cct 5
50
–
150
9.43
6.44
kΩ
kΩ
UP
SM5006ANAS, CF5006ANA
SM5006ANBS, CF5006ANB
6.97
4.76
8.2
5.6
SM5006ANCS, CF5006ANC
SM5006CNCS, CF5006CNC
4.16
4.9
5.64
Feedback resistance
R
f
SM5006ANDS, CF5006AND
SM5006ANES, CF5006ANE
SM5006ANFS, CF5006ANF
SM5006CNDS, CF5006CND
SM5006CNES, CF5006CNE
2.21
2.6
2.99
R
Design value, determined by the R value
f
17
17
20
20
8
23
23
G
Built-in resistance
Built-in capacitance
Ω
R
Design value, determined by the R value
f
D
C
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
7.44
14.88
8.56
17.12
G
pF
C
16
D
SEIKO NPC CORPORATION —7
NPC [ NIPPON PRECISION CIRCUITS INC ]
