SM5006 series
5006AH series
= 4.5 to 5.5V, V = 0V, Ta = −40 to 85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
V
Q: Measurement cct 1, V = 4.5V, I = 4mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 4mA
DD OL
0.5
10
10
–
OL
V
V
= V
= V
–
OH
DD
Q: Measurement cct 2, INHN = LOW,
= 5.5V
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
2.0
–
–
V
V
IH
V
–
0.8
IL
SM5006AHAS
CF5006AHA
f = 30MHz
f = 40MHz
–
–
–
–
–
–
15
18
25
25
32
32
30
36
50
50
65
65
SM5006AHBS
CF5006AHB
INHN = open,
Measurement cct 3,
load cct 1,
f = 60MHz,
Ta = –20 to 80°C
CF5006AHC
SM5006AHCS
CF5006AHD
SM5006AHDS
Current consumption
I
mA
DD
f = 60MHz,
Ta = –15 to 75°C
V = 4.5 to 5.5V,
DD
C = 15pF
L
f = 70MHz,
Ta = –20 to 80°C
f = 70MHz,
Ta = –15 to 75°C
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
50
6.97
4.76
4.16
2.21
17
–
150
9.43
6.44
5.64
2.99
23
kΩ
kΩ
UP
SM5006AHAS, CF5006AHA
SM5006AHBS, CF5006AHB
SM5006AHCS, CF5006AHC
SM5006AHDS, CF5006AHD
8.2
5.6
4.9
2.6
20
20
8
R
f
R
Design value, determined by the R value
f
G
Built-in resistance
Built-in capacitance
Ω
R
Design value, determined by the R value
f
17
23
D
C
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
7.44
14.88
8.56
17.12
G
pF
C
16
D
SEIKO NPC CORPORATION —10