Nexperia
BAS316
High-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
715
855
1
Unit
mV
mV
V
VF
forward voltage
IF = 1 mA
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IF = 10 mA
IF = 50 mA
IF = 150 mA
1.25
30
V
IR
reverse current
VR = 25 V; Tj = 25 °C
VR = 80 V; Tj = 25 °C
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
VR = 0 V; f = 1 MHz; Tj = 25 °C
nA
µA
µA
µA
pF
ns
0.5
30
50
Cd
trr
diode capacitance
1.5
4
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
VFRM
peak forward recovery IF = 10 mA; tr = 20 ns
voltage
-
-
1.75
V
[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
006aab132
mbg704
3
2
10
10
I
F
I
FSM
(A)
(mA)
2
10
10
10
1
(1) (2) (3) (4)
1
-1
-1
10
10
2
3
4
0
0.2
0.4
0.6
0.8
1.0
1.2
V
1.4
(V)
1
10
10
10
10
t (µs)
p
F
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Based on square wave currents.
Tj(init) = 25 °C
Fig. 2. Non-repetitive peak forward current as a
function of pulse duration; typical values
Fig. 1. Forward current as a function of forward
voltage; typical values
©
BAS316
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
4 / 10
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