Nexperia
BAS316
High-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
Tj = 25 °C
-
100
V
VR
IF
reverse voltage
forward current
-
-
-
-
-
-
100
250
4
V
[1]
mA
A
IFSM
non-repetitive peak
forward current
tp = 1 µs; square wave; Tj(init) = 25 °C
tp = 1 ms; square wave; Tj(init) = 25 °C
tp = 1 s; square wave; Tj(init) = 25 °C
tp ≤ 0.5 ms; δ = 0.25
1
A
0.5
500
A
IFRM
repetitive peak forward
current
mA
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tsp ≤ 90 °C
[1] [2]
-
400
150
150
150
mW
°C
-
Tamb
Tstg
-65
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
150
Unit
Rth(j-sp)
thermal resistance from in free air
junction to solder point
[1]
-
-
K/W
[1] Soldering point of cathode tab.
©
BAS316
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Nexperia B.V. 2022. All rights reserved
Product data sheet
1 July 2022
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