µPD43256B
Low VCC Data Retention Characteristics
L Version (µPD43256B-L: TA = 0 to 70 ˚C)
Parameter
Symbol
Test conditions
CS ≥ VCC – 0.2 V
VCC = 3.0 V, CS ≥ VCC – 0.2 V
MIN.
2.0
TYP.
0.5
MAX.
5.5
Unit
V
Data retention supply voltage VCCDR
Data retention supply current ICCDR
Note
20
µA
ns
Chip deselection to data
retention mode
tCDR
0
5
Operation recovery time
tR
ms
Note 3 µA (TA ≤ 40 ˚C)
LL Version (µPD43256B-LL: TA = 0 to 70 ˚C)
A Version (µPD43256B-A: TA = 0 to 70 ˚C)
B Version (µPD43256B-B: TA = 0 to 70 ˚C)
Parameter
Symbol
Test conditions
CS ≥ VCC – 0.2 V
VCC = 3.0 V, CS ≥ VCC – 0.2 V
MIN.
2.0
TYP.
0.5
MAX.
5.5
Unit
V
Data retention supply voltage VCCDR
Note
Data retention supply current
ICCDR
tCDR
7
µA
ns
Chip deselection to data
retention mode
0
5
Operation recovery time
tR
ms
Note 2 µA (TA ≤ 40 ˚C), 1 µA (TA ≤ 25 ˚C)
15
NEC [ NEC ]
