2SK3298
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
120
SINGLE AVALANCHE ENERGY
DERATING FACTOR
V
DD
= 150 V
R
G
= 25
Ω
V
GS
= 20 V
→
0 V
I
AS
≤
7.5 A
I
AS
- Single Avalanche Energy - A
10
I
AS
= 7.5 A
Energy Derating Factor - %
100
80
60
40
20
0
25
E
AS
=3
7.5
mJ
1.0
R
G
= 25
Ω
V
DD
= 150 V
V
GS
= 20 V
→
0 V
Starting T
ch
= 25˚C
100
µ
1m
10 m
L - Inductive Load - H
0.1
10
µ
50
75
100
125
150
Starting T
ch
- Starting Channel Temperature -
˚C
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0
±
0.3
4.5
±
0.2
2.7
±
0.2
φ
3.2
±
0.2
15.0
±
0.3
3
±
0.1
EQUIVALENT CIRCUIT
12.0
±
0.2
Drain (D)
4
±
0.2
13.5 MIN.
Gate (G)
Body
Diode
0.7
±
0.1
2.54 TYP.
1.3
±
0.2
1.5
±
0.2
2.54 TYP.
0.65
±
0.1
2.5
±
0.1
Source (S)
1.Gate
2.Drain
3.Source
1 2 3
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D14059EJ1V0DS00
NEC [ NEC ]
