2SK3298
5
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
25
Pulsed
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
100
T
ch
= –25˚C
25˚C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
20
6.0 V
15
10
5
0
0
10
20
30
40
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
8.0 V
10
T
ch
= 75˚C
125˚C
1.0
0.1
0
0
5
10
15
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
5.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
I
D
= 1 mA
4.0
100
T
ch
=
–25˚C
25˚C
75˚C
125˚C
V
DS
= 10 V
Pulsed
3.0
10
2.0
1.0
1.0
0
–50
0
50
100
150
T
ch
- Channel Temperature -
˚C
0.1
0.1
1.0
10
100
I
D
- Drain Current - A
R
DS (on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
3.0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
4.0
3.0
V
GS
= 10 V
2.0
2.0
I
D
= 7.5 A
4.0 A
1.0
1.0
20 V
Pulsed
0
0
1
10
100
0
0
5
10
15
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Data Sheet D14059EJ1V0DS00
3
NEC [ NEC ]
