2SK3298
R
DS (on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
I
SD
- Diode Forward Current - A
3.0
I
D
= 7.5 A
4.0 A
2.0
100
10
1.0
V
GS
= 10 V
0V
1.0
V
GS
= 10 V
Pulsed
100
150
0.1
0
–50
0
50
0
0
0.5
1
1.5
T
ch
- Channel Temperature -
˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
SWITCHING CHARACTERISTICS
t
d(off)
t
f
t
d(on)
10
100
C
oss
t
r
1
V
DD
= 150 V
V
GS(on)
= 10 V
R
G
= 10
Ω
1
10
I
D
- Drain Current - A
100
10
V
GS
= 0 V
f = 1MHz
1
10
100
C
rss
1000
1
0.1
0.1
0.1
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10
t
rr
- Reverse Recovery Time -
µs
V
DS
- Drain to Source Voltage - V
600
1
V
DD
= 450 V
300 V
150 V
V
GS
12
10
8
6
400
0.1
200
V
DS
0
0
4
2
20
30
0
40
0.01
0.1
1
10
100
10
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D14059EJ1V0DS00
V
GS
- Gate to Source Voltage - V
di/dt = 50 A/
µs
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
16
I
D
= 7.5 A
14
NEC [ NEC ]
