2SK3298
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
Drain Leakage Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 4.0 A
V
GS
= 10 V, I
D
= 4.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 4.0 A
V
GS(on)
= 10 V
V
DD
= 150 V
R
G
= 10
Ω
I
D
= 7.5 A
V
DD
= 450 V
V
GS
= 10 V
I
F
= 7.5 A, V
GS
= 0 V
I
F
= 7.5 A, V
GS
= 0 V
di/dt = 50 A/
µ
s
2.5
3.2
0.67
1580
280
25
27
14
66
24
34
8.2
12.3
1.0
1.6
9.0
0.75
MIN.
TYP.
MAX.
100
±100
3.5
UNIT
µ
A
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
µ
s
µ
C
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90 %
90 %
V
GS
V
GS
Wave Form
0
10 %
V
GS
(on)
90 %
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10 %
10 %
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14059EJ1V0DS00
NEC [ NEC ]
