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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Absolute Maximum Ratings  
Absolute Maximum DC Ratings  
Symbol  
Parameter  
Rating  
Unit  
V
Note  
1,3  
1,3  
1
VDD  
Voltage on VDD pin relative to Vss  
Voltage on VDDQ pin relative to Vss  
Voltage on any pin relative to Vss  
Storage Temperature  
-0.4 V ~ 1.80 V  
-0.4 V ~ 1.80 V  
-0.4 V ~ 1.80 V  
-55 ~ 150  
VDDQ  
Vin, Vout  
Tstg  
V
V
1,2  
C  
Note:  
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress  
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections  
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.  
3. VDD and VDDQ must be within 300mV of each other at all times; and Vref must be not greater than 0.6VDDQ, when VDD and  
VDDQ are less than 500Mv; Vref may be equal to or less than 300mV.  
Refresh parameters by device density  
Parameter  
2Gb  
Unit  
Symbol  
REF command to ACT or REF command time  
tRFC  
160  
ns  
Version 1.4  
05/2019  
83  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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