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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low  
periods  
If the total time in Precharge Power Down state or Idle state is very short, the transition periods for PD entry and PD exit  
may overlap. In this case, the response of the DDR3(L) SDRAMs RTT to a change in ODT state at the input may be  
synchronous or asynchronous from the state of the PD entry transition period to the end of the PD exit transition period  
(even if the entry ends later than the exit period).  
If the total time in Idle state is very short, the transition periods for PD exit and PD entry may overlap. In this case, the  
response of the DDR3(L) SDRAMs RTT to a change in ODT state at the input may be synchronous or asynchronous from  
the start of the PD exit transition period to the end of the PD entry transition period. Note that in the following figure, it is  
assumed that there was no Refresh command in progress when Idle state was entered.  
Transition period for short CKE cycles with entry and exit period overlapping  
(AL=0; WL=5; tANPD=WL-1=4)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
CK  
CK  
CMD  
REF  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CKE  
tANPD  
tANPD  
tXPDLL  
PD exit transition period  
PD entry transition period  
tRFC(min)  
CKE  
Short CKE high transition period  
tXPDLL  
Do not  
care  
Transitioning  
Version 1.4  
05/2019  
80  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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