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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
DRAM setting for write leveling and DRAM termination unction in that mode  
DRAM enters into Write leveling mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write leveling  
mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/ terminations are activated and deactivated  
via ODT pin not like normal operation.  
MR setting involved in the leveling procedure  
Function  
MR1  
Enable  
Disable  
Write leveling enable  
Output buffer mode (Qoff)  
A7  
1
0
0
1
A12  
DRAM termination function in the leveling mode  
ODT pin at DRAM  
DQS/ termination  
DQs termination  
De-asserted  
off  
on  
off  
off  
Asserted  
Note: In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are allowed; in Write  
Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom settings of RZQ/2, RZQ/4, and RZQ/6 are  
allowed.  
Procedure Description  
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling mode, the  
DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are allowed. As well  
as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the output of other rank must  
be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at which DRAM is ready to accept the  
ODT signal.  
Controller may drive DQS low and  high after a delay of tWLDQSEN, at which time DRAM has applied on-die termination  
on these signals. After tDQSL and tWLMRD controller provides a single DQS, edge which is used by the DRAM to  
sample CK  driven from controller. tWLMRD (max) timing is controller dependent.  
DRAM samples CK -  status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after  
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read strobes  
(DQS/DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or decrement DQS   
delay setting and launches the next DQS/ pulse after some time, which is controller dependent. Once a 0 to 1  
transition is detected, the controller locks DQS  delay setting and write leveling is achieved for the device. The  
following figure describes the timing diagram and parameters for the overall Write leveling procedure.  
Version 1.4  
05/2019  
40  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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