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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Mode Register MR2  
The Mode Register MR2 stores the data for controlling refresh related features, Rtt_WR impedance, and CAS write latency.  
The Mode Register 2 is written by asserting low on , RA, A, WE high on BA1 and low on BA0 and BA2, while  
controlling the states of address pins according to the table below.  
MR2 Definition  
BA2 BA1 BA0  
A15-A13  
A12 A11 A10 A9  
A8  
0
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
CWL  
0
MR select  
0
Rtt_WR  
0
SRT ASR  
ASR  
A6  
0
1
Manual SR Reference (SRT)  
ASR enable  
Rtt_WR  
Dynamic ODT off  
RZQ/4  
A10 A9  
0
0
1
1
0
1
0
1
RZQ/2  
Reserved  
CWL  
5 (tCK(avg)>=2.5ns)  
A5  
0
A4  
0
A3  
0
SRT  
6 (2.5ns>=tCK(avg)>=1.875ns)  
7 (1.875ns>=tCK(avg)>=1.5ns)  
8 (1.5ns>=tCK(avg)>=1.25ns)  
9 (1.25ns>=tCK(avg)>=1.07ns)  
10 (1.07ns>=tCK(avg)>=0.935ns)  
RFU  
A7  
0
0
0
0
1
1
1
0
1
1
0
0
1
1
0
1
0
1
0
Normal operating  
temperature range  
Extended operating  
temperature range  
1
MR select  
MR0  
RFU  
BA1 BA0  
1
1
1
0
0
1
1
0
1
0
1
MR1  
MR2  
MR3  
* 1 : BA2, A5, A8, A11 ~ A15 are RFU and must be programmed to 0 during MRS.  
* 2 : The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled. During write leveling, Dynamic ODT  
is not available.  
Version 1.4  
05/2019  
22  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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